SSM3J306T 2006-08-23 1 toshiba field-effect transistor silicon p-channel mos type SSM3J306T power management switch applications ? 4 v drive ? low on-resistance: r on = 225 m ? (max) (@v gs = ? 4 v) r on = 117 m ? (max) (@v gs = ? 10 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain?source voltage v ds ? 30 v gate?source voltage v gss 20 v dc i d ? 2.4 drain current pulse i dp ? 4.8 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = ? 1 ma, v gs = 0 ? 30 ? ? drain?source breakdown voltage v (br) dsx i d = ? 1 ma, v gs = + 20 v ? 15 ? ? v drain cutoff current i dss v ds = ? 30 v, v gs = 0 ? ? ? 1 a gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = ? 5 v, i d = ? 1 ma ? 1.2 ? ? 2.6 v forward transfer admittance ? y fs ? v ds = ? 5 v, i d =? 1 a (note 2) 1.6 3.1 ? s i d = ? 1 a, v gs = ? 10 v (note 2) ? 80 117 drain?source on-resistance r ds (on) i d = ? 0.5 a, v gs = ? 4 v (note 2) ? 160 225 m ? input capacitance c iss ? 280 ? output capacitance c oss ? 80 ? reverse transfer capacitance c rss v ds = ? 15 v, v gs = 0, f = 1 mhz ? 45 ? pf total gate charge q g ? 2.5 ? gate-source charge q gs ? 1.3 ? gate-drain charge q gd v ds = -15 v, i ds = -2.4 a v gs = -4 v ? 1.2 ? nc turn-on time t on ? 16 ? switching time turn-off time t off v dd = ? 15 v, i d = ? 1 a, v gs = 0 to ? 4 v, r g = 10 ? ? 35 ? ns drain?source forward voltage v dsf i d = 2.4 a, v gs = 0 v (note 2) ? 0.8 1.2 v note 2: pulse test unit: mm jedec D jeita D toshiba 2-3s1a weight: 10 mg (typ.)
SSM3J306T 2006-08-23 2 switching time test circuit marking equivalent circuit (top view) precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = ? 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. v dd = ? 15 v r g = 10 ? d.u. < = < 5 ns common source ta = 25c in 0 ? 4 v 10 s v dd out r g r l (c) v out t on 90% 10% ? 4 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit jj9 1 2 3 1 2 3
SSM3J306T 2006-08-23 3 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) drain?source voltage v ds (v) i d ? v ds drain current i d (a) gate?source voltage v gs (v) i d = ? 1 a common source ambient temperature ta (c) r ds (on) ? ta drain?source on-resistance r ds (on) (m ? ) drain current i d (a) r ds (on) ? i d drain?source on-resistance r ds (on) (m ? ) common source ta = 25c gate?source voltage v gs (v) drain?source on-resistance r ds (on) (m ? ) r ds (on) ? v gs 0 ? 4 0 ? 0.2 ? 0.4 ? 0.6 ? 1 ? 3 vgs = ? 3.3 v ? 3.6 v ? 10 v ? 1 ? 2 ? 4 v ? 6 v ? 0.8 -5 i d ? v gs common source v ds = ? 5 v drain current i d (a) -10 0 ? 0.1 ? 1 ? 0.001 ? 0.01 ? 0.0001 ? 4.0 ? 0.5 ? 1.5 ? 25c ta = 100c 25c ? 1.0 ? 3.5 ? 3.0 ? 2.5 ? 2.0 0 ? 2 ? 6 ? 8 ? 4 0 100 200 300 400 25 c ta = 100c ? 25c 450 350 250 150 50 500 ? 10 400 0 100 ? 3 150 250 350 vgs = ? 4.0 v 0 ? 2 ? 4 50 200 300 450 ? 1 ? 10 v ? 5 500 common source ta = 25c 500 0 ? 50 i d = ?0.5 a / v gs = ?4.0 v 0 50 150 100 200 300 400 100 ?1.0 a / ?10 v common source ? 2.0 0 ? 50 0 150 ? 0.5 ? 1.0 ? 1.5 50 100 common source v ds = ? 5 v i d = ? 1 ma
SSM3J306T 2006-08-23 4 switching time t (ns) drain current i d (a) t ? i d drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds common source v gs = 0 v ta = 25c drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d drain?source voltage v ds (v) c ? v ds capacitance c (pf) 0.1 ? 10 1 10 ? 0.1 ? 1 3 0.3 ? 0.01 common source v ds = ? 5 v ta = 25c g d s i dr 10 0 0.1 1 0.001 0.01 0.0001 0.2 0.6 0.4 1.0 0.8 1.2 ? 25c ta = 100c 25c 10 ? 0.1 ? 1 ? 10 ? 100 100 1000 300 500 30 50 c iss c oss c rss common source ta = 25c f = 1 mhz v gs = 0 v 1 0.01 100 0.1 600 1 10 t off t f 10 t on t r common source v dd = ? 10 v v gs = 0 to ? 4 v ta = 25c r g = 10 ? total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 4 8 4 8 10 10 6 2 6 2 common source i d = -2.4 a ta = 25c vdd = -15v vdd = -24v
SSM3J306T 2006-08-23 5 transient thermal impedance rth (c/w) pulse width t w (s) r th ? t w 1 100 1000 10 0.001 0.01 0.1 1000 1 10 100 single pulse a: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 0.8 mm 2 3) b a ambient temperature t a (c) p d ? t a drain power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 a b a: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 0.8 mm 2 3)
SSM3J306T 2006-08-23 6
|
